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| APTM100UM60FAG Single Switch MOSFET Power Module SK S D VDSS = 1000V RDSon = 60m typ @ Tj = 25C ID = 129A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant G DK DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM100UM60FAG Rev 2 July, 2006 Tc = 25C Max ratings 1000 129 97 516 30 70 2272 25 50 3000 Unit V A V m W A APTM100UM60FAG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C Typ VGS = 10V, ID = 64.5A VGS = VDS, ID = 15mA VGS = 30 V, VDS = 0V 60 3 Max 600 3 70 5 500 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 129A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 129A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 129A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 129A, R G = 0.8 Min Typ 31.1 5.28 0.96 1116 144 732 18 12 155 40 5.4 3.7 8.5 4.7 Max Unit nF nC ns mJ mJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25C Tc = 80C VGS = 0V, IS = - 129A IS = - 129A VR = 670V diS/dt = 600A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 21.6 58.3 Max 129 97 1.3 18 320 650 Unit A V V/ns ns C July, 2006 2-6 APTM100UM60FAG Rev 2 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 129A di/dt 700A/s VR VDSS Tj 150C www.microsemi.com APTM100UM60FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 3 2 Typ Max 0.055 150 125 100 5 3.5 280 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM100UM60FAG Rev 2 July, 2006 APTM100UM60FAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.06 Thermal Impedance (C/W) 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0 0.00001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 360 V GS=15, 10&8V Transfert Characteristics 480 420 ID, Drain Current (A) 360 300 240 180 120 60 0 30 0 1 2 3 4 5 T J=25C T J=125C VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle I D, Drain Current (A) 300 240 180 120 60 0 0 5 10 15 20 7V 6.5V 6V 5.5V 5V T J=-55C 25 6 7 8 9 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 64.5A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 140 120 100 80 60 40 20 0 25 50 75 100 125 150 July, 2006 4-6 APTM100UM60FAG Rev 2 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 VGS =10V V GS=20V 100 150 200 250 300 350 ID, Drain Current (A) TC, Case Temperature (C) www.microsemi.com APTM100UM60FAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area VGS =10V ID=64.5A 1000 100s limited by R DSon 100 1ms 10 Single pulse TJ=150C TC=25C 10ms 1 1 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 12 10 8 6 4 2 0 0 250 500 750 1000 1250 1500 Gate Charge (nC) July, 2006 C, Capacitance (pF) ID=129A TJ=25C V DS =500V VDS=200V 10000 Coss V DS=800V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-6 APTM100UM60FAG Rev 2 APTM100UM60FAG Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 40 80 120 160 200 240 I D, Drain Current (A) Switching Energy vs Current V DS=670V RG =0.8 T J=125C L=100H Rise and Fall times vs Current 80 t d(off) V DS =670V RG =0.8 T J=125C L=100H tf 60 tr and tf (ns) 40 tr 20 t d(on) 0 40 80 120 160 200 I D, Drain Current (A) 240 Switching Energy vs Gate Resistance 20 V DS=670V ID=129A T J=125C L=100H 15 Switching Energy (mJ) Switching Energy (mJ) 12.5 10 7.5 5 2.5 0 VDS=670V RG=0.8 TJ=125C L=100H E on Eoff 16 12 8 4 0 Eoff Eon Eoff 40 80 120 160 200 240 0 1 2 3 4 5 6 I D, Drain Current (A) Operating Frequency vs Drain Current Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 200 IDR, Reverse Drain Current (A) 250 1000 Frequency (kHz) 150 100 50 0 10 30 VDS=670V D=50% RG=0.8 T J=125C T C=75C ZCS ZVS 100 T J=150C 10 TJ=25C Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 50 70 90 110 ID, Drain Current (A) 130 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM100UM60FAG Rev 2 |
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